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| sot C23 p?channel sot?23 these miniature surface mount mosfets reduce power loss conserve energy, making this device ideal for use in small power management circuitry. typical applications are dcCdc converters, load switching, power management in portable and batteryCpowered products such as computers, printers, cellular and cordless telephones. ? energy efficient ? miniature sotC23 surface mount package saves board space symbol value unit drainCtoCsource voltage v dss 50 v dc gateCtoCsource voltage C continuous v gs 20 v dc drain current C continuous @ t a = 25 c C pulsed drain current (t p 10 s) i d i dm 130 520 ma total power dissipation @ t a = 25 c p d 225 mw operating and storage temperature range t j ,t stg C 55 to 150 c thermal resistance C junctionCtoCambient r ja 556 c/w maximum lead temperature for soldering purposes, for 10 seconds t l 260 c rating maximum ratings (t j = 25 c unless otherwise noted) 3 drain 1 - gate source marking diagram m ? device package shipping BSS84LT1 sot-23 3000/tape&reel ordering information 130 pd = device code m = month code pd 2012-10 willas electronic corp. bss84l t1 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drainCtoCsource breakdown voltage (v gs = 0 vdc, i d = 250 adc) v (br)dss 50 C C vdc zero gate voltage drain current (v ds = 25 vdc, v gs = 0 vdc) (v ds = 50 vdc, v gs = 0 vdc) (v ds = 50 vdc, v gs = 0 vdc, t j = 125 c) i dss C C C C C C 0.1 15 60 adc gateCbody leakage current (v gs = 20 vdc, v ds = 0 vdc) i gss C C 10 nadc on characteristics (note 1.) gateCsource threaded voltage (v ds = v gs , i d = 1.0 madc) v gs(th) 0.8 C 2.0 vdc static drainCtoCsource onCresistance (v gs = 5.0 vdc, i d = 100 madc) r ds(on) C 5.0 10 ohms transfer admittance (v ds = 25 vdc, i d = 100 madc, f = 1.0 khz) |y fs | 50 C C ms dynamic characteristics input capacitance (v ds = 5.0 vdc) c iss C 30 C pf output capacitance (v ds = 5.0 vdc) c oss C 10 C transfer capacitance (v dg = 5.0 vdc) c rss C 5.0 C switching characteristics (note 2.) turnCon delay time t d(on) C 2.5 C ns rise time (v dd = C15 vdc, i d = C2.5 adc, t r C 1.0 C turnCoff delay time (v dd 15 vdc , i d 2 . 5 adc , r l = 50 ? ) t d(off) C 16 C fall time t f C 8.0 C gate charge q t C 6000 C pc source?drain diode characteristics continuous current i s C C 0.130 a pulsed current i sm C C 0.520 forward voltage (note 2.) v sd C 2.5 C v 1. pulse test: pulse width 300 s, duty cycle 2%. 2. switching characteristics are independent of operating junction temperature. typical electrical characteristics figure 1. transfer characteristics figure 2. on?region characteristics ! ! " 2012-10 willas electronic corp. 130 bss84l t1 #$ % #$ & figure 3. on?resistance versus drain current figure 4. on?resistance versus drain current figure 5. on?resistance variation with temperature " " figure 6. gate charge ' #$ & ( & ) " ! ! ! typical electrical characteristics * + figure 7. body diode forward voltage " 2012-10 willas electronic corp. 130 bss84l t1 sot - 23 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 2012-10 willas electronic corp. 130 bss84l t1 dimensions in inches and (millimeters) .080(2.04) .070(1.78) .110(2.80) .086(2. 1 0) .006(0.15)min. .008(0.20) .003(0.08) .055(1.40) .035(0.89) .020(0.50) .012(0.30) .004(0.10)max. .122(3.10) .106(2.70) .063(1.60) .047(1.20) |
Price & Availability of BSS84LT1
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